FGA6560WDF
Manufacturer:
On Semiconductor
Mfr.Part #:
FGA6560WDF
Datasheet:
Description:
IGBTs TO-3PN Through Hole 2.3 V 306 W 120 A
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 306 W |
| Power Dissipation | 306 W |
| Max Collector Current | 120 A |
| Collector Emitter Breakdown Voltage | 650 V |
| Reverse Recovery Time | 110 ns |
| Continuous Collector Current | 120 A |
| Collector Emitter Voltage (VCEO) | 2.3 V |
| Collector Emitter Saturation Voltage | 1.8 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Maximum Gate Emitter Voltage | 30 V |
Stock: 279
Distributors
pcbx
pcbxUnit Price$3.08246
Ext.Price$3.08246
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $3.08246 | $3.08246 |
| 10 | $2.66122 | $26.61220 |
| 25 | $2.46672 | $61.66800 |
| 50 | $2.28643 | $114.32150 |
| 100 | $2.11932 | $211.93200 |
| 300 | $1.96443 | $589.32900 |
| 500 | $1.82086 | $910.43000 |
| 1000 | $1.68780 | $1687.80000 |